QUANTUM DETECTION ELEMENT WITH LOW NOISE AND METHOD FOR MANUFACTURING SUCH A PHOTODETECTION ELEMENT

According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centred around a central wavelength lambda 0, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength lambda c> lambda 0, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength lambda 0 allowing the absorption of more than 80 % in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength lambda rad, wherein the radiative wavelength lambda rad is the wavelength for which, at operating temperature, the radiative recombination rate is the highest. 根据个方面，本发明涉及种用于对以