Barrier cascading quantum well infrared detector

The invention discloses a barrier cascading quantum well infrared detector. The detector comprises a compound semiconductor material substrate, wherein seven barrier layers and quantum well layers with different widths are alternately grown on the substrate as one circle; multiple-quantum wells are repeatedly grown for multiple circles; and the detector also comprises an auxiliary conveying unit including two groups of quantum well layers and barrier layers. By adoption of the cascading tunneling structure, a photoelectric signal which is stronger than that of the existing quantum well infrared detector can be formed in the quantum well region at a low-temperature state under infrared irradiation, so that the detector is more applicable to the quantum well infrared focal plane device. 本发明公开了种势垒级联量子阱红外探测器，它由化合物半导体材料衬底，在衬底上交替生长七个宽度不势垒层和量子阱层，并以此为个周期，重复生长多个周期的多量子阱，再附加包含两组量子阱层与势垒层的辅助输运单元组成。由于本发明采用了级联隧穿结构，在低温状态下，在红外光的辐照下，它可以在量子阱区域形成比目前提出的量子阱红外探测器更强的光电信号，从而更加适用于量子阱红外焦平面器件用。