Method Of Manufacturing Semiconductor Device

The present invention aims to provide a method of manufacturing a semiconductor device to thereby provide the semiconductor device with improved reliability. After formation of a first insulating film for an interlayer insulating film by spin coating, the surface of the first insulating film is subjected to a hydrophilicity improving treatment. A second insulating film for the interlayer insulating film is then formed on the first insulating film by spin coating. The interlayer insulating film is comprised of a stacked insulating film including the first insulating film and the second insulating film thereon. The interlayer insulating film therefore can have improved surface flatness. 提供种制造半导体器件的方法，以提供具有改善的可靠性的半导体器件。在通过旋涂形成层间绝缘膜的第绝缘膜之后，使第绝缘膜的表面受到亲水性改善处理。然后通过旋涂，在第绝缘膜上形成层间绝缘膜的第二绝缘膜。该层间绝缘膜由包括第绝缘膜和其上的第二绝缘膜的堆叠的绝缘膜组成。因此，该层间绝缘膜可具有改善的表面平整度。