Wafer partition testing method of LED chip

The present invention provides a wafer partition testing method of a LED chip, belonging to the field of the LED production application technology. Each grain of 20-40 circles at the periphery of the chip is subjected to wafer test one by one, and each grain located in the wafer test loop of the chip is subjected to the wafer test. The wafer partition testing method of LED chip combines the feature of the LED chip epitaxial growth, the wafer photoelectric property shows edge dispersing and has a total trend from the edge to the middle area, and the wafer partition testing method of the LED chip takes into account the quality of the LED chip wafer and the spot measurement efficiency. The wafer partition testing method of a LED chip employs the mode of total point measurement of the edge photoelectric property dispersing area and concentration area test of middle photoelectric property to realize accurate point measurement of the LED chip edge and reach the purpose of lifting the quality of the LED chip wafer a