Passivated contact N-type solar cell, preparation method, assembly and system

The invention relates to a passivated contact N-type solar cell, a preparation method, an assembly and a system. The preparation method for a passivated contact N-type solar cell includes the steps of conducting doping treatment for the front surface of an N-type crystalline silicon substrate to form a p+ doped region; preparing a tunneling oxide layer on the back surface of the N-type crystalline silicon substrate, then preparing a phosphorus-containing amorphous silicon layer or phosphorus-containing polysilicon layer on the tunneling oxide layer, and then conducting annealing; and after preparation of passivated anti-reflection film and a passivated film, printing and sintering metal slurry to obtain a front electrode and a back electrode. The beneficial effects of the invention lie in that the tunneling oxide layer can provide the silicon substrate with an excellent surface passivated effect and achieve selective tunneling of carriers, the n+ doped polysilicon layer can effectively transmit the carriers f