Semiconductor device and associated method of manufacture

The disclosure relates to a semiconductor device comprising a body having: a first surface and an opposing second surface; a first semiconductor layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, the plurality of active trenches extending from the first surface into the first semiconductor layer and having an active trench width, and a plurality of active cells, each active cell provided in the first semiconductor layer adjacent to an active trench, the active cells having an active cell width; and a termination region at a periphery of the first surface comprising: at least one termination trench, the at least one termination trench extending from the first surface into the first semiconductor layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than the active cell width, wherein the active trenches and the at least one termi