Dynamic storage based on open bit line structure

The invention relates to a dynamic storage based on an open bit line structure. The dynamic storage comprises a decoder circuit, a sense amplifier and a plurality of dual-storage units, wherein the decoder circuit comprises a first decoding unit and a second decoding unit which have the same structure, an input end of a first XOR gate circuit is connected with an external address signal RA , the other input end of the first XOR gate circuit is connected with a cfg_dualcell signal, and an output end of a first phase inverter controls a bit line Wl of one dual-storage unit in a storage unit array module to be opened; and an input end of a second XOR gate circuit is connected with an inverted signal/RAI of the external address signal RA , the other input end of the second XOR gate circuit is connected with the cfg_dualcell signal, and an output end of a second phase inverter controls the other bit line Wl of one dual-storage unit in the storage unit array module to be opened. According to the dynamic storage, th