Color image sensor and method of manufacturing the same

Embodiments of the application relates to a color image sensor and a method of manufacturing the same. The color image sensor including an array of pixels is formed in a semiconductor layer having a back side that receives an illumination. Insulated conductive walls penetrate into the semiconductor layer from the back side and separate the pixels from one another. For each pixel, a color pixel penetrates into from 5 to 30% of a thickness of the semiconductor layer from the back side and occupies at least 90% of the surface area delimited by the walls. An electrically-conductive layer extends from the lateral wall of the filter all the way to the walls. 本公开的实施方式涉及种彩色图像传感器及其制造方法，该彩色图像传感器包括形成在半导体层中的像素的阵列，半导体层具有接收照射的后侧。隔离的导电壁从半导体层的后侧穿入半导体层并且将像素彼此分离。对于每个像素，彩色像素从半导体层的后侧穿入半导体厚度的5％至30％并且占据由壁界定的表面区域的至少90％。导电层从滤色器的侧壁延伸直到所述壁。