Local back surface N-type photovoltaic cell preparation method, local back surface N-type photovoltaic cell, local back surface N-type photovoltaic cell assembly and local back surface N-type photovoltaic cell system
The present invention relates to a local back surface N-type photovoltaic cell preparation method, a local back surface N-type photovoltaic cell, a local back surface N-type photovoltaic cell assembly and a local back surface N-type photovoltaic cell system. The preparation method comprises the foll...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present invention relates to a local back surface N-type photovoltaic cell preparation method, a local back surface N-type photovoltaic cell, a local back surface N-type photovoltaic cell assembly and a local back surface N-type photovoltaic cell system. The preparation method comprises the following steps: arranging a mask clamp at the back surface of a N-type crystal silicon substrate, the mask clamp having an opening with a back auxiliary grid pattern shape, injecting phosphor at the opening and performing annealing processing, and forming a local n+ doped area; printing a back electrode at the back surface of the N-type crystal silicon substrate by using metal slurry, and connecting the back auxiliary grid of the back electrode with the local n+ doped area; and preparing a right side electrode being ohmic contact with a p+ doped area at the right surface of the N-type crystal silicon substrate by using metal wires. Because the back auxiliary grid is contacted with the local n+ doped area, the contact |
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