Storage unit and manufacturing method therefor

The invention discloses a storage unit and a manufacturing method therefor. The method comprises the steps: forming a semiconductor material strip which is provided with a storage unit region, a first contact landing region, and a switching region located between the storage unit region and the first contact landing region; forming a storage unit layer on the surface of a strip in the storage unit region; forming a plurality of storage unit grids in the storage unit region of the strip; and forming a switching grid electrode on the landing region of the strip; depositing a doped insulating material on a part of a semiconductor material strip between the first contact landing region and the storage unit region; and diffusing dopant to the part of the semiconductor material strip from the doped insulating material. 本发明公开了种存储器装置及其制造方法。该存储器装置的制造方法包括：形成半导体材料条，具有存储器区域、第接触着陆区区域以及在存储器区域与第接触着陆区区域之间的开关区域；形成存储器层于存储器区域中的条的表面上；形成多个存储单元栅极是于此条的存储器区域上；形成开关栅极于此条的开关区域上面；沉积掺杂绝缘材料于第接触着陆区区域与存储器区域之间的部分半导体材料条上；从掺杂绝缘材料扩散掺质进入部分半导体材料条