Method for manufacturing semiconductor element

The preparation method of semiconductor element includes the following steps: firstly, forming doped polycrystalline silicon layer by deposition, forming pattern on the polycrystalline silicon layer so as to define the electrode range under the capacitor, then depositing first hemispherical silicon...

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Bibliographische Detailangaben
Hauptverfasser: SHIWEI SUN, CUIRONG YOU, HUOTIE LU
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The preparation method of semiconductor element includes the following steps: firstly, forming doped polycrystalline silicon layer by deposition, forming pattern on the polycrystalline silicon layer so as to define the electrode range under the capacitor, then depositing first hemispherical silicon crystal grain layer, obstructing the growth of first layer of HSG-Si and implementing the growth ofsecond layer of HSG-Si so as to form polycrystalline silicon surface structure with large contact area.