Process chamber apparatus, systems, and methods for controlling a gas flow pattern

Process chamber gas flow control apparatus may include, or be included in, a process chamber configured to process a substrate therein. The gas flow control apparatus may include a valve configured to seal an exhaust port in the process chamber. The valve may be moveable in the X, Y, and Z direction...

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Bibliographische Detailangaben
Hauptverfasser:	MERRY NIR, HUDGENS JEFFREY C, SAPKALE CHANDRAKANT M, KREMERMAN IZYA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACTUATING-FLOATS BASIC ELECTRIC ELEMENTS BLASTING CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COCKS DEVICES FOR VENTING OR AERATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVEFUNCTIONING OF MACHINES OR INSTALLATIONS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HEATING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIGHTING MECHANICAL ENGINEERING METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TAPS TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS THERMAL INSULATION IN GENERAL VALVES WEAPONS
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Beschreibung
Zusammenfassung:	Process chamber gas flow control apparatus may include, or be included in, a process chamber configured to process a substrate therein. The gas flow control apparatus may include a valve configured to seal an exhaust port in the process chamber. The valve may be moveable in the X, Y, and Z directions relative to the exhaust port to adjust a gas flow pattern (including, e.g., flow rate and/or flow uniformity) within the process chamber. Methods of adjusting a flow of a process gas within a process chamber are also provided, as are other aspects. 处理腔室气流控制设备可包含处理腔室或被包含于处理腔室，所述处理腔室经配置以在处理腔室中处理基板。所述气流控制设备可包含阀，所述阀经配置以密封所述处理腔室中的排气口。所述阀可在X、Y及Z方向上相对于所述排气口为可移动的，以调整所述处理腔室内的气流模式(包含，例如，流动速率和/或流动均匀性)。调整处理腔室内处理气体流动的方法也被提供，如同其它方面。