SILICON ETCH AND CLEAN

The invention relates to silicon etch and clean. A method for etching features into a silicon containing etch layer is provided. The etch layer is placed into a plasma processing chamber. An etch gas is flowed into the plasma processing chamber. The etch gas is formed into an etch plasma, wherein the etch plasma etches features into the silicon containing layer leaving silicon containing residue. The flow of etch gas into the plasma processing chamber is stopped. A dry clean gas is flowed into the plasma processing chamber, wherein the dry clean gas comprises NH3 and NF3. The dry clean gas is formed into a plasma, wherein the silicon containing residue is exposed to the dry clean gas plasma, and wherein at least some or all of the silicon containing residue is formed into ammonium containing compounds. The flow of the dry clean gas is stopped. The ammonium compounds are sublimated from the films. 本发明涉及硅蚀刻与清洁。提供了一种用于将特征蚀刻到含硅蚀刻层中的方法。将蚀刻层放置到等离子体处理室中。使蚀刻气体流入所述等离子体处理室。使蚀刻气体形成蚀刻等离子体，其中所述蚀刻等离子体将特征蚀刻到所述含硅层中，留下含硅残留物。使