Metallization having high power compatibility and high electrical conductivity

A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver,that is arranged between the bottom layer and the upper layer. 本发明涉及用于电器件中的载流结构的金属化部及其制造方法，该金属化部布置在衬底（S）上，且具有基座、布置在该基座上的上覆层（TL）以及该基座中的布置在下层（BL）与上层（UL）之间的中间层（ML），其中基座包括下层（BL），该下层布置在衬底表面上方或者布置在衬底表面上并且包括Ti或者钛化合物作为主要成分，基座包括上层（UL），该上层布置在下层（BL）上方或者直接布置在下层（BL）上并且包括Cu作为主要成分，上覆层（TL）直接布置在上层上并且包括Al作为主要成分，以及中间层（ML）包括Ag。