High-throughput wet chemistry combination material chip preparing device and method

The invention relates to a high-throughput wet chemistry combination material chip preparing device and method. The high-throughput wet chemistry combination material chip preparing device comprises a temperature control box. A supporting frame is arranged in the temperature control box. A waste liq...

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Bibliographische Detailangaben
Hauptverfasser:	CUI YUXING, YAN ZONGKAI, LI GUANG, JIANG ZHAOLIAN, XIANG YONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a high-throughput wet chemistry combination material chip preparing device and method. The high-throughput wet chemistry combination material chip preparing device comprises a temperature control box. A supporting frame is arranged in the temperature control box. A waste liquid pool is arranged on the supporting frame. A reaction pool is arranged above the waste liquid pool in the vertical direction. A pool bottom liquid draining opening is formed in the bottom of the reaction pool, and a liquid draining speed controller is arranged at the position of the pool bottom liquid draining opening. A solution pool is arranged above the reaction pool in the vertical direction, liquid feeding openings are formed in the bottom of the solution pool, and liquid feeding speed controllers are arranged at the positions of the liquid feeding openings. A perpendicular lifter is arranged above the reaction pool in the vertical direction. The perpendicular lifter is fixedly connected with a clamp throug