Extraction method and device for MOSFET threshold voltage fluctuation model

The invention discloses an extraction method and device for a MOSFET threshold voltage fluctuation model. The method comprises the steps that a MOSFET is selected, and the offset of the threshold voltage of the selected MOSFET relative to a design target value is Vt'; a preset regulating voltag...

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Bibliographische Detailangaben
Hauptverfasser: KONG YURAN, GAO CHAO
Format: Patent
Sprache:chi ; eng
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