Extraction method and device for MOSFET threshold voltage fluctuation model

The invention discloses an extraction method and device for a MOSFET threshold voltage fluctuation model. The method comprises the steps that a MOSFET is selected, and the offset of the threshold voltage of the selected MOSFET relative to a design target value is Vt'; a preset regulating voltage is applied to a grid electrode of the selected MOSFET, corresponding operating voltages are applied to other electrodes, and the corresponding threshold voltage fluctuation model of the selected MOSFET under the regulating voltage is extracted. By the application of the method and device, the accuracy of the MOSFET threshold voltage fluctuation model can be improved. 种MOSFET阈值电压波动模型的提取方法及装置，所述方法包括：选取MOSFET，所选取的MOSFET阈值电压相对设计目标值的偏移量为Vt'；在所选取的MOSFET栅极施加预设的调节电压，其他各电极施加相应的工作电压，提取所选取的MOSFET在所述调节电压下对应的阈值电压波动模型。应用所述方法及装置可以提高MOSFET阈值电压波动模型的准确性。