Tunneling field effect transistor with off-state current suppression function

The invention discloses a tunneling field effect transistor with an off-state current suppression function and belongs to the logic device and circuit field in the super large-scale integrated circuit field. High potential can be shared through short circuiting between an N type drain region or a P type source region and an N type epitaxial layer, so that short circuited by N, sharing a, so that PN junctions formed by an N type buried layer and the N type source region, or a P type drain region, an intrinsic region and a P type substrate can be reversely biased, and as a result, tunneling at the lower part of the source region of an original device, which is controlled by drain voltage, can be decreased, at this moment, leakage current is mainly the reversely biased PN junction current of the N type epitaxial layer, the N type source region or the P type drain region, and therefore, the off-state current of the tunneling field effect transistor can be effectively decreased under the condition that the size of