Method of producing layer structure, layer structure, a method of forming patterns and a semiconductor device

The invention provides a method of producing a layer structure, the layer structure, a method of forming patterns and a semiconductor device. The method of producing the layer structure includes forming a first organic layer (S1) by applying a first composition including an organic compound on a sub...

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Bibliographische Detailangaben
Hauptverfasser:	YI, SONGSE, KIM, YOUNG-MIN, YU, NAERY, JEONG, SEULGI, KIM, MIN-SOO, NAM, YOUN-HEE, KANG, SUN-HAE, YOON, BYERI, KIM, SUNG-HWAN, KIM, MYEONGKOO, LEE, CHUNG-HEON, JO, YEON-HEE, HWANG, SUN-MIN, KIM, SUNG-MIN, YOON, YONG-WOON, SONG, HYUN-JI, KIM, YUN-JUN, BAEK, JAE-YEOL, KIM, HEA-JUNG, HONG, SEUNG-HEE, HWANG, WON-JONG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	The invention provides a method of producing a layer structure, the layer structure, a method of forming patterns and a semiconductor device. The method of producing the layer structure includes forming a first organic layer (S1) by applying a first composition including an organic compound on a substrate having a plurality of patterns, applying a solvent on the first organic layer to remove a part (S2) of the first organic layer, and applying a second composition including an organic compound on a remaining part of the first organic layer and forming a second organic layer (S3) through a curing process, so that the layer structure with excellent flat characteristics can be manufactured, and individual etching-back procedures or chemico-mechanical polishing procedures are not needed.