MOSFET device and manufacturing method thereof and electronic device

MOSFET device and manufacturing method thereof and electronic device

The invention provides an MOSFET device and a manufacturing method thereof and an electronic device. The method comprises the steps as follows: a semiconductor substrate is provided, wherein the semiconductor substrate comprises a plurality of threshold voltage regions; a gate oxidation layer is for...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: LI RUOYUAN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LI RUOYUAN
description The invention provides an MOSFET device and a manufacturing method thereof and an electronic device. The method comprises the steps as follows: a semiconductor substrate is provided, wherein the semiconductor substrate comprises a plurality of threshold voltage regions; a gate oxidation layer is formed on the semiconductor substrate; fluorine ions are injected into the gate oxidation layer and the semiconductor substrate; a gate material layer is formed on the gate oxidation layer; and source/drain formation processes of various threshold voltage regions are carried out respectively. By the method provided by the invention, the HCI effect and the NBTI effect of the MOSFET device can be suppressed; the reliability of the device is improved; the performance of the device is improved; and meanwhile, the manufacturing cost of the MOSFET device can also be saved.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN105529267A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN105529267A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN105529267A3</originalsourceid><addsrcrecordid>eNrjZHDx9Q92cw1RSEkty0xOVUjMS1HITcwrTUtMLiktysxLV8hNLcnIT1EoyUgtSs1PAytIzUlNLinKz8tMhmrjYWBNS8wpTuWF0twMikAznT10Uwvy41OLCxKTU_NSS-Kd_QwNTE2NLI3MzB2NiVEDAGKyMlM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MOSFET device and manufacturing method thereof and electronic device</title><source>esp@cenet</source><creator>LI RUOYUAN</creator><creatorcontrib>LI RUOYUAN</creatorcontrib><description>The invention provides an MOSFET device and a manufacturing method thereof and an electronic device. The method comprises the steps as follows: a semiconductor substrate is provided, wherein the semiconductor substrate comprises a plurality of threshold voltage regions; a gate oxidation layer is formed on the semiconductor substrate; fluorine ions are injected into the gate oxidation layer and the semiconductor substrate; a gate material layer is formed on the gate oxidation layer; and source/drain formation processes of various threshold voltage regions are carried out respectively. By the method provided by the invention, the HCI effect and the NBTI effect of the MOSFET device can be suppressed; the reliability of the device is improved; the performance of the device is improved; and meanwhile, the manufacturing cost of the MOSFET device can also be saved.</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160427&amp;DB=EPODOC&amp;CC=CN&amp;NR=105529267A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160427&amp;DB=EPODOC&amp;CC=CN&amp;NR=105529267A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LI RUOYUAN</creatorcontrib><title>MOSFET device and manufacturing method thereof and electronic device</title><description>The invention provides an MOSFET device and a manufacturing method thereof and an electronic device. The method comprises the steps as follows: a semiconductor substrate is provided, wherein the semiconductor substrate comprises a plurality of threshold voltage regions; a gate oxidation layer is formed on the semiconductor substrate; fluorine ions are injected into the gate oxidation layer and the semiconductor substrate; a gate material layer is formed on the gate oxidation layer; and source/drain formation processes of various threshold voltage regions are carried out respectively. By the method provided by the invention, the HCI effect and the NBTI effect of the MOSFET device can be suppressed; the reliability of the device is improved; the performance of the device is improved; and meanwhile, the manufacturing cost of the MOSFET device can also be saved.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDx9Q92cw1RSEkty0xOVUjMS1HITcwrTUtMLiktysxLV8hNLcnIT1EoyUgtSs1PAytIzUlNLinKz8tMhmrjYWBNS8wpTuWF0twMikAznT10Uwvy41OLCxKTU_NSS-Kd_QwNTE2NLI3MzB2NiVEDAGKyMlM</recordid><startdate>20160427</startdate><enddate>20160427</enddate><creator>LI RUOYUAN</creator><scope>EVB</scope></search><sort><creationdate>20160427</creationdate><title>MOSFET device and manufacturing method thereof and electronic device</title><author>LI RUOYUAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN105529267A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LI RUOYUAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LI RUOYUAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MOSFET device and manufacturing method thereof and electronic device</title><date>2016-04-27</date><risdate>2016</risdate><abstract>The invention provides an MOSFET device and a manufacturing method thereof and an electronic device. The method comprises the steps as follows: a semiconductor substrate is provided, wherein the semiconductor substrate comprises a plurality of threshold voltage regions; a gate oxidation layer is formed on the semiconductor substrate; fluorine ions are injected into the gate oxidation layer and the semiconductor substrate; a gate material layer is formed on the gate oxidation layer; and source/drain formation processes of various threshold voltage regions are carried out respectively. By the method provided by the invention, the HCI effect and the NBTI effect of the MOSFET device can be suppressed; the reliability of the device is improved; the performance of the device is improved; and meanwhile, the manufacturing cost of the MOSFET device can also be saved.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN105529267A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MOSFET device and manufacturing method thereof and electronic device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T23%3A24%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LI%20RUOYUAN&rft.date=2016-04-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN105529267A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true