MOSFET device and manufacturing method thereof and electronic device

The invention provides an MOSFET device and a manufacturing method thereof and an electronic device. The method comprises the steps as follows: a semiconductor substrate is provided, wherein the semiconductor substrate comprises a plurality of threshold voltage regions; a gate oxidation layer is formed on the semiconductor substrate; fluorine ions are injected into the gate oxidation layer and the semiconductor substrate; a gate material layer is formed on the gate oxidation layer; and source/drain formation processes of various threshold voltage regions are carried out respectively. By the method provided by the invention, the HCI effect and the NBTI effect of the MOSFET device can be suppressed; the reliability of the device is improved; the performance of the device is improved; and meanwhile, the manufacturing cost of the MOSFET device can also be saved.