Apparatus and method for curvature and thin film stress measurement

An apparatus for curvature and thin film stress measurement is disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a specimen with a pitch. The detector r...

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Bibliographische Detailangaben
Hauptverfasser:	FU CHUNG-HUA, CHUNG BUIN, WU CHUNG-YUAN, CHAMPETIER ROBERT
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS MEASURING MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR PHYSICS TARIFF METERING APPARATUS TESTING
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Beschreibung
Zusammenfassung:	An apparatus for curvature and thin film stress measurement is disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a specimen with a pitch. The detector receives the light beams reflected from the specimen. The curvature of the specimen is calculated via a distance between spots of the light beams on the detector or a size variation of one of the spots. Two independent light sources are used and chip curvature is measured by means of the distance between the two spots of the two light sources and the size of the spots, thus effectively increasing the measurement range and making the measurement range wider. The two independent light sources are used so that the curvature measurement can be performed without the need of moving the chip.