Method for regulating and controlling room-temperature magnetic property of diluted magnetic semiconductor material
The invention discloses a method for regulating and controlling room-temperature magnetic property of a TiO2 based diluted magnetic semiconductor material, and belongs to the field of magnetic semiconductor materials. According to the method, a TiO2 based film material is induced to generate lattice...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a method for regulating and controlling room-temperature magnetic property of a TiO2 based diluted magnetic semiconductor material, and belongs to the field of magnetic semiconductor materials. According to the method, a TiO2 based film material is induced to generate lattice distortion by adopting substrates or buffer layers with different lattice constants. The purpose of regulating and controlling the intensity of the magnetic coupling effect of internal defects and the room-temperature magnetic property of the material is achieved by controlling the lattice distortion of the film. Pure TiO2 or TiO2 doped with one or more of non magnetic ions Al, Mg, Zn and/or magnetic ions Co, Ni and Fe is selected and used as a target material, and the film is deposited on the substrates or the buffer layers with the different lattice constants by using a magnetron sputtering method or a pulsed laser deposition method, so that lattices of the TiO2 based film material of epi |
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