SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

There is to provide a semiconductor device and a method of manufacturing the same capable of improving avalanche resistance while suppressing an increase in an ON resistance. The semiconductor device includes a first semiconductor region of a first conductivity type, an element region, a terminal region surrounding the element region, and a second electrode. The element region includes a second semiconductor region of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a gate electrode, and a first electrode. The terminal region includes a fifth semiconductor region of the second conductivity type, and a sixth semiconductor region of the second conductivity type. The fifth semiconductor region is provided within the first semiconductor region. A plurality of the fifth semiconductor regions are provided along a second direction. The sixth semiconductor region is provided between the first semiconductor region an