Composite wafer having graphite core and method for manufacturing same

The invention relates to a composite wafer having a graphite core and a method for manufacturing same. According to an embodiment, the composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

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Bibliographische Detailangaben
Hauptverfasser:	RAIMUND FOERG, RUDOLF BERGER, GUENTHER RUHL, HERMANN GRUBER, ANTON MAUDER, MICHAEL SOMMER, CHRISTIAN ROTTMAIR, WOLFGANG LEHNERT, HANS-JOACHIM SCHULZE, ROLAND RUPP, KARSTEN KELLERMANN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention relates to a composite wafer having a graphite core and a method for manufacturing same. According to an embodiment, the composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.