Light emitting diode crystal grain and manufacturing method thereof
A light emitting diode crystal grain comprises a first semiconductor layer; a first light emitting layer being formed on the first semiconductor layer and emitting first color light; a second light emitting layer being formed on the first light emitting layer and emitting second color light differen...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A light emitting diode crystal grain comprises a first semiconductor layer; a first light emitting layer being formed on the first semiconductor layer and emitting first color light; a second light emitting layer being formed on the first light emitting layer and emitting second color light different from the first color light; and a second semiconductor layer formed on the second light emitting layer. In the light emitting diode crystal grain, the first light emitting layer and the second light emitting layer formed on the first light emitting layer are formed in the same light emitting diode crystal grain, the first color light emitted by the first light emitting layer and the second color light emitted by the second light emitting layer can be fully mixed to form another kind of color light different from the first color light and the second color light, and the light emitting diode crystal grain has excellent color rendering and color mixing performance and is low in cost. The invention further designs a |
|---|