High-temperature silicon carbide MOSFET drive circuit

Provided is a high-temperature silicon carbide MOSFET drive circuit, and belongs to the field of high-temperature power and electronics. The invention solves the problem that a largest voltage supply of a high-temperature resistant chip as a signal generating source is less than 18V, a high level of a PWM signal output by the chip is less than 18V, which cannot meet a requirement of 18V for the high level of a drive signal. The invention takes a high temperature 200 DEG C resistant NPN transistor 2N2222, a PNP transistor 2N2907, a regulator chip TPS76901, a 1N53XX series voltage regulator tube, a timer chip CHT-555 as foundation, the high temperature 200 DEG C resistant silicon carbide MOSFET drive circuit is designed. The drive circuit can magnify a 0-5V square wave signal generated by a CHT-555 timer into a silicon carbide MOSFET drive signal with a low level of -5V and a high level of 18V, wherein a rise time and a fall time of the magnified drive signal are both less than 80ns.