SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF PROCESSING SUBSTRATE

The invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of processing the substrate. The invention provides the technology for uniformly providing high exposed quantity gas for the substrate and carrying out process with high producti...

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Bibliographische Detailangaben
Hauptverfasser:	HIDEHARU ITATANI, SADAYOSHI HORII, MITSUHIRO HIRANO, MITSUNORI ISHISAKA, MOTONARI TAKEBAYASHI, SATOSHI TAKANO, YUICHI WADA, TETSUAKI INADA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of processing the substrate. The invention provides the technology for uniformly providing high exposed quantity gas for the substrate and carrying out process with high production quantity. The interior of a processing chamber is divided into a first processing region where first processing gas atmosphere is formed and a second processing region where second processing gas atmosphere is formed. In at least one region, a pipeline-shaped gas supplying part and a gap holding part are provided. The pipeline-shaped gas supplying part is provided with a pipeline-shaped opening part and is used for supplying gas for the region. The gap holding part protrudes from the top face of the processing chamber towards the substrate side around the opening part.