Silicon oxide layer etching liquid

The invention relates to a silicon oxide layer etching liquid, which comprises fluorine compounds, sulfonic compounds comprising at least two sulfuric radicals, salts of the sulfonic compounds, and water. The provided etching liquid can maintain the etching speed on silicon oxide layer, and at the same time, reduces the etching speed on silicon nitride layer, which is taken as the lower insulation membrane of the pixel electrode. So the loss of the nitride layer is minimized, and the lower membrane is protected. A thinner nitride layer structure becomes feasible. The defects during the process of semiconductor production are reduced, and a finer semiconductor structure can be formed.