Array substrate and manufacturing method thereof

The invention discloses an array substrate and a manufacturing method thereof. The manufacturing method of the array substrate comprises the following steps: forming a top-gate thin film transistor, particularly, forming a source and a drain on the substrate; sequentially laminating an organic semic...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: XU HONGYUAN, SU CHANGYI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention discloses an array substrate and a manufacturing method thereof. The manufacturing method of the array substrate comprises the following steps: forming a top-gate thin film transistor, particularly, forming a source and a drain on the substrate; sequentially laminating an organic semiconductor layer, a first insulating layer and a grid on the source and the drain; and with the grid as a hard mask, gradually patterning the first insulating layer and the semiconductor layer by an etching technology. The top-gate thin film transistor is obtained by the manufacturing method of the array substrate disclosed by the invention; and the first insulating and the semiconductor layer are sequentially patterned by the grid as the hard mask, so that the manufacture procedure is simple; and damages to an organic material in the process of patterning the organic semiconductor layer can be avoided.