Bipolar transistor epitaxial wafer manufacturing method adopting varied temperature and varied doping flow

The invention discloses a bipolar transistor epitaxial wafer manufacturing method adopting varied temperature and varied doping flow. The bipolar transistor epitaxial wafer manufacturing method adopts the varied temperature and varied doping technologies, can effectively control evaporation of B atoms with low initial growth temperature and high N-type doping flow, and gradually suppress self-doping of an epitaxy along with the thickening of an epitaxial layer. The over-doping of N-type impurities of the epitaxial layer can be effectively reduced by reducing the doping flow subsequently, thereby guaranteeing the controllable transition region required by the product epitaxial layer, and increasing the growth temperature to suppress pattern drift.