Radiation hardened static random access memory

The invention provides a radiation hardened static random access memory, and relates to the field of radiation hardening circuits. The radiation hardened static random access memory aims at solving the problem that because an existing static random access memory is sensitive to radiation articles in space and natural radiation environments, reliability is poor. The radiation hardened static random access memory is composed of 12 MOS pipes, namely, the PMOS pipe P1, the PMOS pipe P2, the PMOS pipe P3, the PMOS pipe P4, the PMOS pipe P5, the PMOS pipe P6, the PMOS pipe P7, the PMOS pipe P8, the NMOS transistor N1, the NMOS transistor N2, the NMOS transistor N3 and the NMOS transistor N4. By means of the radiation hardened static random access memory, upset of any single node in an SRAM unit can be reinforced and multi-node upset prevention fault tolerance can be conducted on two fixed nodes without depending on stored values. The radiation hardened static random access memory is used in integrated circuit design.