Asymmetric compensation method for photoetching overlay manufacturing process

The invention discloses an asymmetric compensation method for a photoetching overlay manufacturing process, which comprises the steps of providing a first substrate with circuit layout, a first photomask pattern and a second photomask pattern, wherein the first photomask pattern and the second photo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIU ENQUAN, BAI YUANJI, YOU CHUNQI, GUO TENGQIN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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