Asymmetric compensation method for photoetching overlay manufacturing process

The invention discloses an asymmetric compensation method for a photoetching overlay manufacturing process, which comprises the steps of providing a first substrate with circuit layout, a first photomask pattern and a second photomask pattern, wherein the first photomask pattern and the second photomask pattern are sequentially overlaid on the circuit layout, and the first photomask pattern and the second photomask pattern respectively has an x-axis allowable deviation range and a y-axis allowable deviation range, which are not equal, relative to the circuit layout; acquiring the coordinate offset of the first photomask pattern relative to the second photomask pattern; and calculating the offset difference of the coordinate offset relative to the x-axis allowable deviation range and the y-axis allowable deviation range, and totalizing a first multiple of the coordinate offset and a second multiple of the offset difference so as to acquire an x-axis compensation parameter and a y-axis compensation parameter to act as final compensation parameters.