Heterojunction high electron mobility spinning field effect transistor and manufacturing method

The invention relates to a heterojunction high electron mobility spinning field effect transistor and a manufacturing method. The transistor comprises a 3C-SiC drain region, a 3C-SiC source region, a 3C-SiC channel region, a Schottky contact gate electrode, an Si substrate, a drain electrode, a source electrode, and an SiN isolation layer. The 3C-SiC drain region, the 3C-SiC source region and the 3C-SiC channel region are located on the Si substrate. The source electrode is located in the 3C-SiC source region, the Schottky contact gate electrode is located in the 3C-SiC channel region, and the drain electrode is located in the 3C-SiC drain region. The SiN isolation layer is located between the source electrode and the Schottky contact gate electrode and between the Schottky contact gate electrode and the drain electrode. The transistor can change the doping density and defect density of source-drain materials through adjusting the dosage and annealing time of ion injection, thereby optimizing the spinning polarizability of the drain region and the source region under room temperature.