IGBT (insulated gate bipolar transistor) chip and manufacturing method therefor

The invention discloses an IGBT chip and a manufacturing method therefor. The IGBT chip comprises at least one cell, wherein the space between a first normal trench and a second normal trench is divided into two parts by arranging an auxiliary trench between the first normal trench and the second trench. Compared with the large space between the first normal trench and the second trench, the difference between the space between the first normal trench and the auxiliary trench, and the space between a trench gate type IGBT chip and an other adjacent trench is small, while the difference between the space between the second normal trench and the auxiliary trench, and the space between the trench gate type IGBT chip and the other adjacent trench is small, so that the extraction uniformity of carriers when the IGBT chip is cutoff is improved, and the flexibility of the IGBT chip cutoff characteristic is improved.