Grid array pattern double exposure manufacturing method

The invention discloses a grid array pattern double exposure manufacturing method. At first, a semiconductor substrate is provided, and a polysilicon film and photoresist are formed on the semiconductor substrate; the photoresist is exposed for the first time by a first mask under the preset illumination condition, and the transmissivity of the overlapped area on the first mask is reduced; the photoresist is exposed for the second time by a second mask under the preset illumination condition, and the transmissivity of the overlapped area after the double exposure is 100%; and then grid line patterns and line end cutting patterns are formed in the photoresist by means of baking and developing technology after the exposure; at the end, a target pattern is formed on a polysilicon film through etching technology. The transmissivity of the overlapping after the double exposure is 100%, so that the overlapped area cannot generate excessive photoacid reaction and good imaging quality can be guaranteed; and meanwhile, the method greatly reduces the manufacturing process, improves the productivity efficiency, and reduces the manufacturing cost.