Phase change memory and method for manufacturing same

The invention discloses a phase change memory and a method for manufacturing the same. The method for manufacturing the phase change memory comprises the following steps of (i) forming a first dielectric layer, a conductive contact structure and a first electrode on a semiconductor substrate; (ii) forming a second dielectric layer with an opening on the first dielectric layer, wherein the opening is exposed out of the top surface of the first electrode; (iii) forming a side wall of a lining wrapped opening of a barrier layer; (iv) forming a phase change component in the opening, wherein the phase change component comprises a base and an enclosure wall, the enclosure wall upwards extends along the barrier layer from the peripheral edge of the base, a recess is defined by the inner edge of the enclosure wall, and the width of the entrance of the recess is greater than the width of the bottom of the recess; (v) forming a heating component to be filled in the recess; and (vi) forming a second electrode above the heating component. According to the method, the phase change component and the heating component embedded in the phase change component can be formed in the dielectric layer only by a lithographic etching process in one time.