Atom gas chamber inner wall coating method for slowing down atomic spin relaxation

The invention provides an atom gas chamber inner wall coating method for slowing down atomic spin relaxation. The method includes the steps that firstly, rubidium atom steam is injected into an atom gas chamber; then, hydrogen with the pressure intensity of 10 Torr to 100 Torr is released into the atom gas chamber through hydride solid gas release agents (such as titanium hydride and calcium hydride), the pressure intensity is kept for tens to hundreds of hours at the temperature 50 DEG C to 150 DEG C, and a layer of rubidium hydride thin film can be attached to the inner wall of the atom gas chamber; and finally, hydrogen left in the gas chamber is evacuated, and the coating process is finished. Hydrogen is generated through the solid gas release agents in the coating process; compared with a traditional method that a high-pressure hydrogen bottle is used as a hydrogen source, the process safety is improved when rubidium hydride coating is conducted on the inner wall of the atom gas chamber, and hydrogen left in the gas chamber after rubidium hydride coating is evacuated; and compared with the method for directly sealing hydrogen in the gas chamber, stability of performance of the atom gas chamber is easily improved.