Precursor solution for preparing semiconductor electro-thermal film, electro-thermal film and preparation method of electro-thermal film

The invention discloses a precursor solution for preparing a semiconductor electro-thermal film, the electro-thermal film and a preparation method of the electro-thermal film. The preparation method comprises the following steps: firstly, providing a precursor solution for preparing the semiconductor electro-thermal film formed by mixing tin tetrachloride, nanometer tin dioxide, antimony trichloride, hydrofluoric acid, boric acid, potassium chloride, triethanolamine and relevant solvents; and secondly, providing a film forming process combining a spray film forming process and a dipping process assisted by a gradient heat treatment process in order to obtain the semiconductor electro-thermal film which has high film forming quality and is suitable for large-size production. Binding force between the electro-thermal film and a substrate is enhanced, and the electro-thermal film with a high thermal shock resistance is obtained. The uniformity and film-making efficiency of large-area film formation are improved. The electro-thermal film with a large square resistance adjustable range is obtained in order to meet different industry demands.