Ultra-high-voltage level shifting circuit for IGBT (Insulated Gate Bipolar Translator) driving chip

The invention belongs to the technical field of electronic circuits, and in particular relates to an ultra-high-voltage level shifting circuit for an IGBT (Insulated Gate Bipolar Translator) driving chip. The ultra-high-voltage level shifting circuit disclosed by the invention comprises a pulse circuit generation module, a pulse signal shaping module, an ultra-high-voltage level shifting module and an RS trigger, wherein the pulse signal shaping module and the ultra-high-voltage level shifting module are each composed of two sub-modules same in structure; each sub-module forms a circuit; one control chain is used for generating a pulse signal chain for turning on a high-side IGBT; and the other control chain is used for generating a pulse signal chain for turning off the high-side IGBT. The ultra-high-voltage level shifting circuit disclosed by the invention has the benefits that: the turn-on speed of a NLDMOS (N-channel Laterally Diffused Metal Oxide Semiconductor) is reduced while the level shifting power consumption is reduced; dV/dt and di/dt of the NLDMOS are reduced; and the reliability of the NLDMOS is increased.