Substrate processing device

The invention provides a substrate processing device which is beneficial to improvement of production efficiency and lessening of set area. The substrate processing device includes a processing part for process a first surface and a second surface of a substrate, a temperature adjustment part for ad...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NAOYUKI NOZAWA, MATSUGI NOBUO, IMAI KOMEI, YAMADA TAMIO, YOSHOJIN NISHIHARA
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:The invention provides a substrate processing device which is beneficial to improvement of production efficiency and lessening of set area. The substrate processing device includes a processing part for process a first surface and a second surface of a substrate, a temperature adjustment part for adjusting the temperature of the substrate, a drive part for allowing the temperature adjustment part to move, and a delivery part for delivering the substrate; a process of the first surface of the substrate performed by the processing part is performed in a first configuration, wherein the first configuration is that the substrate is configured in a first position and the temperature is configured on one side of the second surface of the substrate; a process of the second surface of the substrate performed by the processing part is performed in a second configuration, wherein the second configuration is that the substrate is configured in a second position and the temperature adjustment part is configured on one side of the first surface of the substrate; for processing the second surface in the second configuration after the first surface is processed in the first configuration, and the delivery part delivers the substrate from the first position to the second position along a delivery path, when the delivery part delivers the substrate from the first position to the second position, the drive part allows the temperature adjustment to temporarily retreat from the delivery path.