Silicon carbide VDMOS device and manufacturing method

The invention belongs to the semiconductor technology and particularly relates to a silicon carbide VDMOS device and a manufacturing method. The silicon carbide VDMOS device comprises a silicon carbide N type heavily-doped substrate, a silicon carbide N-epitaxial layer above the silicon carbide N ty...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANG YACHAO, DENG XIAOCHUAN, LIANG KUNYUAN, ZHANG BO, LI YANYUE, XIAO HAN, GAN ZHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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