Method for low-temperature deposition of silicon nitride film

The invention discloses a method for low-temperature deposition of a silicon nitride film. The method for low-temperature deposition of the silicon nitride film is a method capable of preparing the silicon nitride film at relatively low temperature. The film prepared by the method is mainly applied to an organic light-emitting diode (OLED) packaging technology. According to the method, a stable radio frequency is provided by a radio frequency system; a lower electrode accurately controls relatively low temperature through a thermocouple; the silicon nitride film is deposited on a substrate through a plasma technology; and the film surface is subjected to post-treatment through the radio frequency after deposition is ended, so that the compactness of the film surface is increased. According to the method, the temperature rise of the substrate surface in each deposition process is relatively small; a layered deposition form can be adopted; and the film property is not affected by layered deposition.