Sheet of semiconducting material, system for forming same, and method of forming same

A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable o...

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Bibliographische Detailangaben
Hauptverfasser: BLANDING DOUGLASS LANE, SONI KAMAL KISHORE, MAZUMDER PRANTIK, BISWAS SAMIR, COOK GLEN BENNETT, SUMAN BALRAM
Format: Patent
Sprache:eng
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Zusammenfassung:A method of forming a sheet of semiconductor material utilizes a system. The system comprises a first convex member extending along a first axis and capable of rotating about the first axis and a second convex member spaced from the first convex member and extending along a second axis and capable of rotating about the second axis. The first and second convex members define a nip gap therebetween. The method comprises applying a melt of the semiconductor material on an external surface of at least one of the first and second convex members to form a deposit on the external surface of at least one of the first and second convex members. The method further comprises rotating the first and second convex members in a direction opposite one another to allow for the deposit to pass through the nip gap, thereby forming the sheet of semiconductor material.