Gallium nitride heterojunction field effect transistor and forming method thereof

The invention belongs to the electronic component field and provides a forming method of a gallium nitride heterojunction field effect transistor. The forming method includes the following steps that: a substrate is formed; a dielectric layer is formed on the substrate; a gate electrode is formed on...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YU WENJIE, LIU QIANG, HE JIAZHU, YANG YUJIA, CHEN LINGXIAO, LYU YOUMING, LIU XINKE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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