Gallium nitride heterojunction field effect transistor and forming method thereof

The invention belongs to the electronic component field and provides a forming method of a gallium nitride heterojunction field effect transistor. The forming method includes the following steps that: a substrate is formed; a dielectric layer is formed on the substrate; a gate electrode is formed on the dielectric layer; and the outer side of the gate electrode is wrapped with a stress liner thin film. The invention also provides a gallium nitride heterojunction field effect transistor. With the forming method of the invention adopted, the electrical properties of the gallium nitride heterojunction field effect transistor can be effectively improved, namely, threshold voltage can be effectively controlled, or the threshold voltage can be moved to a positive direction, so that an enhanced gallium nitride device can be formed, and the parasitic resistance of the device can be decreased.