Method for preparing zinc oxide film and zinc oxide film

The invention relates to a method for preparing zinc oxide film, and belongs to the field of film preparation. The method comprises the following steps that firstly, a substrate is placed on a substrate platform; and secondly, under the conditions that the oxygen pressure is larger than or equal to 0.2 Pa and the temperature of the substrate ranges from 100 DEG C to 400 DEG C, a zinc oxide target is used, a pulse laser sputtering method is used for depositing the zinc oxide film on the substrate in a sputtering mode, and the purity of the zinc oxide target is 99.99%. Experiments prove that the ZnO film prepared under the conditions that the oxygen pressure is 0.2 Pa and the temperature of the substrate is 300 DEG C is optimal in microstructure and optimal in electric conductivity and transmittance. The film has the orientation at the height axis c, the full width at half maximum (FWHM) is only 0.2 degree, the electrical resistivity is 0.004 .cm, and the average visible light transmittance is over 80%; along with increasing of oxygen partial pressure and the temperature of the substrate, the electrical resistivity of the film is increased, the film presents the property of a semiconductor, and therefore the effect of preparing pieces of film with different electrical resistivities is achieved.