Ito patterning device and patterning method

An ITO patterning device and a patterning method are disclosed. An ITO patterning method according to an aspect of the present invention comprises the steps of: forming an amorphous ITO layer on film or glass; forming a portion, which is to be formed as an ITO pattern, as polycrystalline ITO by partially annealing the amorphous ITO layer using a line beam-type laser beam and a mask, which has a to-be-formed ITO pattern formed thereon; and forming an ITO pattern by removing amorphous ITO, which has not been annealed, from the amorphous ITO layer by chemical etching such that the polycrystalline ITO remains. The wavelength of the laser beam is in a range above 0 and equal to or less than 250nm, and the amount of energy is in a range equal to or more than 60mJ/cm2 and equal to or less than 100mJ/cm2.