GaN-based light-emitting diode (LED) epitaxy structure containing ternary superlattice and preparation method of GaN-based LED epitaxy structure
The invention relates to the technical field of luminescence of semiconductors, in particular to a GaN-based light-emitting diode (LED) epitaxy structure containing a ternary superlattice and a preparation method of the GaN-based LED epitaxy structure. According to the technical scheme, the GaN-base...
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Zusammenfassung: | The invention relates to the technical field of luminescence of semiconductors, in particular to a GaN-based light-emitting diode (LED) epitaxy structure containing a ternary superlattice and a preparation method of the GaN-based LED epitaxy structure. According to the technical scheme, the GaN-based LED epitaxy structure comprises a patterned substrate, a buffer layer, a non-doped intrinsic GaN layer, an N-type GaN layer, a multi-InGaN/GaN quantum well active layer, a ternary superlattice layer and a P-type GaN layer, which are sequentially stacked; and the ternary superlattice layer is formed by growing the ternary superlattice which formed by an InGaN layer, an AlGaN layer and an MgGaN layer after growing a multi-quantum well layer. The GaN-based LED epitaxy structure has the beneficial effects that the dislocation defect of the quantum well layer and subsequent p-type GaN can be effectively reduced; the crystal quality of a GaN epitaxy film is improved; the carrier concentration can be effectively increased; and relatively good electronic blocking and diffusion are provided, so that the internal resistance is reduced, and the internal quantum efficiency is improved. |
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